利用者:加藤勝憲/トランジスター集積度

 

トランジスタ数とは、電子デバイス（通常は1つの基板または「チップ」）内のトランジスタ数のことである。集積回路の複雑さを示す最も一般的な尺度である（ただし、最近のマイクロプロセッサのトランジスタの大部分は、同じメモリセル回路を何度も複製したキャッシュメモリに含まれている）。しかし、トランジスタ数はチップの面積に正比例するため、対応する製造技術の先進性を表すものではない。

MOSトランジスタ数が増加する速度は、一般にムーアの法則に従っている。ムーアの法則では、トランジスタ数は約2年ごとに2倍になるとされている[1]。しかし、トランジスタ数はチップの面積に正比例するため、対応する製造技術がどれほど進んでいるかを示すものではない。これをよりよく示すのは、トランジスタ密度（チップの面積に対するトランジスタ数の比率）である。

2023年現在、フラッシュ・メモリで最もトランジスタ数が多いのは、マイクロン・テクノロジ社の2テラバイト（3D積層）16ダイ、232層のV-NANDフラッシュ・メモリ・チップで、5.3兆個の浮遊ゲートMOSFETを搭載している（1トランジスタあたり3ビット）。

2020年現在、シングルチッププロセッサーで最もトランジスタ数が多いのは、セレブラス社のディープラーニングプロセッサー「Wafer Scale Engine 2」だ。TSMCの7nm FinFETプロセスで製造され、ウェハー上の84の露出フィールド（ダイ）に2兆6000億個のMOSFETを搭載している[2][3][4][5]。

2024年現在、最もトランジスタ数の多いGPUはNvidiaのGB200 Grace Blackwellで、TSMCの4nmプロセスで製造され、合計2080億個のMOSFETを搭載している。

2023年現在、消費者向けマイクロプロセッサーで最もトランジスタ数が多いのは、アップル社のARMベースのデュアルダイM2 Ultraシステム・オン・チップの1,340億トランジスタで、TSMCの5nm半導体製造プロセスを使って製造されている[6]。

Year Component Name Number of MOSFETs

(in trillions) 		Remarks
2022 Flash memory Micron's V-NAND chip 5.3 stacked package of sixteen 232-layer 3D NAND dies
2020 any processor Wafer Scale Engine 2 2.6 wafer-scale design of 84 exposed fields (dies)
2024 GPU GB200 Grace Blackwell 0.208
2023 microprocessor

(commercial) 		M2 Ultra 0.134 dual-die SoC; entire M2 Ultra is a multi-chip module
2020 DLP Colossus Mk2 GC200 0.059 An IPU in contrast to CPU and GPU

In terms of computer systems that consist of numerous integrated circuits, the supercomputer with the highest transistor count 2016年現在 was the Chinese-designed Sunway TaihuLight, which has for all CPUs/nodes combined "about 400 trillion transistors in the processing part of the hardware" and "the DRAM includes about 12 quadrillion transistors, and that's about 97 percent of all the transistors."[7] To compare, the smallest computer, 2018年現在 dwarfed by a grain of rice, had on the order of 100,000 transistors. Early experimental solid-state computers had as few as 130 transistors but used large amounts of diode logic. The first carbon nanotube computer had 178 transistors and was a 1-bit one-instruction set computer, while a later one is 16-bit (its instruction set is 32-bit RISC-V though).

Estimates of the total numbers of transistors manufactured:

  • Up to 2014: 2.9×1021
  • Up to 2018: 1.3×1022[8][9]

Transistor count[編集]

Plot of MOS transistor counts for microprocessors against dates of in­tro­duction. The curve shows counts doubling every two years, per Moore's law.

Microprocessors[編集]

A microprocessor incorporates the functions of a computer's central processing unit on a single integrated circuit. It is a multi-purpose, programmable device that accepts digital data as input, processes it according to instructions stored in its memory, and provides results as output.

The development of MOS integrated circuit technology in the 1960s led to the development of the first microprocessors.[10] The 20-bit MP944, developed by Garrett AiResearch for the U.S. Navy's F-14 Tomcat fighter in 1970, is considered by its designer Ray Holt to be the first microprocessor.[11] It was a multi-chip microprocessor, fabricated on six MOS chips. However, it was classified by the Navy until 1998. The 4-bit Intel 4004, released in 1971, was the first single-chip microprocessor.

Modern microprocessors typically include on-chip cache memories. The number of transistors used for these cache memories typically far exceeds the number of transistors used to implement the logic of the microprocessor (that is, excluding the cache). For example, the last DEC Alpha chip uses 90% of its transistors for cache.[12]

GPUs[編集]

A graphics processing unit (GPU) is a specialized electronic circuit designed to rapidly manipulate and alter memory to accelerate the building of images in a frame buffer intended for output to a display.

The designer refers to the technology company that designs the logic of the integrated circuit chip (such as Nvidia and AMD). The manufacturer ("Fab.") refers to the semiconductor company that fabricates the chip using its semiconductor manufacturing process at a foundry (such as TSMC and Samsung Semiconductor). The transistor count in a chip is dependent on a manufacturer's fabrication process, with smaller semiconductor nodes typically enabling higher transistor density and thus higher transistor counts.

The random-access memory (RAM) that comes with GPUs (such as VRAM, SGRAM or HBM) greatly increases the total transistor count, with the memory typically accounting for the majority of transistors in a graphics card. For example, Nvidia's Tesla P100 has 15 billion FinFETs (16 nm) in the GPU in addition to 16 GB of HBM2 memory, totaling about 150 billion MOSFETs on the graphics card.[13] The following table does not include the memory. For memory transistor counts, see the Memory section below.  

FPGA[編集]

A field-programmable gate array (FPGA) is an integrated circuit designed to be configured by a customer or a designer after manufacturing.

FPGA Transistor count Date of introduction Designer Manufacturer Process Area Transistor density, tr./mm2 Ref
Virtex 70,000,000 1997 Xilinx
Virtex-E 200,000,000 1998 Xilinx
Virtex-II 350,000,000 2000 Xilinx 130 nm
Virtex-II PRO 430,000,000 2002 Xilinx
Virtex-4 1,000,000,000 2004 Xilinx 90 nm
Virtex-5 1,100,000,000 2006 Xilinx TSMC 65 nm
Stratix IV 2,500,000,000 2008 Altera TSMC 40 nm [14]
Stratix V 3,800,000,000 2011 Altera TSMC 28 nm [15]
Arria 10 5,300,000,000 2014 Altera TSMC 20 nm [16]
Virtex-7 2000T 6,800,000,000 2011 Xilinx TSMC 28 nm [17]
Stratix 10 SX 2800 17,000,000,000 TBD Intel Intel 14 nm 560 mm2 30,400,000 [18][19]
Virtex-Ultrascale VU440 20,000,000,000 Q1 2015 Xilinx TSMC 20 nm [20][21]
Virtex-Ultrascale+ VU19P 35,000,000,000 2020 Xilinx TSMC 16 nm 900 mm2 [注釈 1] 38,900,000 [22][23][24]
Versal VC1902 37,000,000,000 2H 2019 Xilinx TSMC 7<span typeof="mw:Entity" id="mwGnQ"> </span>nm [25][26][27]
Stratix 10 GX 10M 43,300,000,000 Q4 2019 Intel Intel 14<span typeof="mw:Entity" id="mwGoc"> </span>nm 1,400 mm2 [注釈 1] 30,930,000 [28][29]
Versal VP1802 92,000,000,000 2021 ?[注釈 2] Xilinx TSMC 7<span typeof="mw:Entity" id="mwGp8"> </span>nm [30][31]

Memory[編集]

Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on integrated circuits. Nearly all semiconductor memories since the 1970s have used MOSFETs (MOS transistors), replacing earlier bipolar junction transistors. There are two major types of semiconductor memory: random-access memory (RAM) and non-volatile memory (NVM). In turn, there are two major RAM types: dynamic random-access memory (DRAM) and static random-access memory (SRAM), as well as two major NVM types: flash memory and read-only memory (ROM).

Typical CMOS SRAM consists of six transistors per cell. For DRAM, 1T1C, which means one transistor and one capacitor structure, is common. Capacitor charged or not[要説明] is used to store 1 or 0. In flash memory, the data is stored in floating gates, and the resistance of the transistor is sensed[要説明] to interpret the data stored. Depending on how fine scale the resistance could be separated[要説明], one transistor could store up to three bits, meaning eight distinctive levels of resistance possible per transistor. However, a finer scale comes with the cost of repeatability issues, and hence reliability. Typically, low grade 2-bits MLC flash is used for flash drives, so a 16 GB flash drive contains roughly 64 billion transistors.

For SRAM chips, six-transistor cells (six transistors per bit) was the standard. DRAM chips during the early 1970s had three-transistor cells (three transistors per bit), before single-transistor cells (one transistor per bit) became standard since the era of 4 Kb DRAM in the mid-1970s.[32][33] In single-level flash memory, each cell contains one floating-gate MOSFET (one transistor per bit),[34] whereas multi-level flash contains 2, 3 or 4 bits per transistor.

Flash memory chips are commonly stacked up in layers, up to 128-layer in production,[35] and 136-layer managed,[36] and available in end-user devices up to 69-layer from manufacturers.

Flash memory
Chip name Capacity (bits) Flash type FGMOS transistor count Date of introduction Manufacturer(s) Process Area Transistor

density

(tr./mm2) 		Ref
? 256 Kb NOR 262,144 1985 Toshiba 2,000 nm ? ? [37]
1 Mb NOR 1,048,576 1989 Seeq, Intel ?
4 Mb NAND 4,194,304 1989 Toshiba 1,000 nm
16 Mb NOR 16,777,216 1991 Mitsubishi 600 nm
DD28F032SA 32 Mb NOR 33,554,432 1993 Intel ? 280 mm2 120,000 [38][39]
? 64 Mb NOR 67,108,864 1994 NEC 400 nm ? ? [37]
NAND 67,108,864 1996 Hitachi
128 Mb NAND 134,217,728 1996 Samsung, Hitachi ?
256 Mb NAND 268,435,456 1999 Hitachi, Toshiba 250 nm
512 Mb NAND 536,870,912 2000 Toshiba ? ? ? [40]
1 Gb 2-bit NAND 536,870,912 2001 Samsung ? ? ? [37]
Toshiba, SanDisk 160 nm ? ? [41]
2 Gb NAND 2,147,483,648 2002 Samsung, Toshiba ? ? ? [42][43]
8 Gb NAND 8,589,934,592 2004 Samsung 60 nm ? ? [42]
16 Gb NAND 17,179,869,184 2005 Samsung 50 nm ? ? [44]
32 Gb NAND 34,359,738,368 2006 Samsung 40 nm
THGAM 128 Gb Stacked NAND 128,000,000,000 April 2007 Toshiba 56 nm 252 mm2 507,900,000 [45]
THGBM 256 Gb Stacked NAND 256,000,000,000 2008 Toshiba 43 nm 353 mm2 725,200,000 [46]
THGBM2 1 Tb Stacked 4-bit NAND 256,000,000,000 2010 Toshiba 32 nm 374 mm2 684,500,000 [47]
KLMCG8GE4A 512 Gb Stacked 2-bit NAND 256,000,000,000 2011 Samsung ? 192 mm2 1,333,000,000 [48]
KLUFG8R1EM 4 Tb Stacked 3-bit V-NAND 1,365,333,333,504 2017 Samsung ? 150 mm2 9,102,000,000 [49]
eUFS (1 TB) 8 Tb Stacked 4-bit V-NAND 2,048,000,000,000 2019 Samsung ? 150 mm2 13,650,000,000 [50][51]
? 1 Tb 232L TLC NAND die 333,333,333,333 2022 Micron ? 68.5 mm2

(memory array) 		4,870,000,000

(14.6 Gbit/mm2) 		[52][53][54][55]
? 16 Tb 232L package 5,333,333,333,333 2022 Micron ? 68.5 mm2

(memory array) 		77,900,000,000

(16×14.6 Gbit/mm2)
Read-only memory (ROM)
Chip name Capacity (bits) ROM type Transistor count Date of introduction Manufacturer(s) Process Area Ref
? ? PROM ? 1956 Arma N/A ? [56][57]
1 Kb ROM (MOS) 1,024 1965 General Microelectronics ? ? [58]
3301 1 Kb ROM (bipolar) 1,024 1969 Intel N/A ? [58]
1702 2 Kb EPROM (MOS) 2,048 1971 Intel ? 15 mm2 [59]
? 4 Kb ROM (MOS) 4,096 1974 AMD, General Instrument ? ? [58]
2708 8 Kb EPROM (MOS) 8,192 1975 Intel ? ? [38]
? 2 Kb EEPROM (MOS) 2,048 1976 Toshiba ? ? [60]
μCOM-43 ROM 16 Kb PROM (PMOS) 16,000 1977 NEC ? ? [61]
2716 16 Kb EPROM (TTL) 16,384 1977 Intel N/A ? [62][63]
EA8316F 16 Kb ROM (NMOS) 16,384 1978 Electronic Arrays ? 436 mm2 [58][64]
2732 32 Kb EPROM 32,768 1978 Intel ? ? [38]
2364 64 Kb ROM 65,536 1978 Intel ? ? [65]
2764 64 Kb EPROM 65,536 1981 Intel 3,500 nm ? [38][37]
27128 128 Kb EPROM 131,072 1982 Intel ?
27256 256 Kb EPROM (HMOS) 262,144 1983 Intel ? ? [38][66]
? 256 Kb EPROM (CMOS) 262,144 1983 Fujitsu ? ? [67]
512 Kb EPROM (NMOS) 524,288 1984 AMD 1,700 nm ? [37]
27512 512 Kb EPROM (HMOS) 524,288 1984 Intel ? ? [38][68]
? 1 Mb EPROM (CMOS) 1,048,576 1984 NEC 1,200 nm ? [37]
4 Mb EPROM (CMOS) 4,194,304 1987 Toshiba 800 nm
16 Mb EPROM (CMOS) 16,777,216 1990 NEC 600 nm
MROM 16,777,216 1995 AKM, Hitachi ? ? [69]

Transistor computers[編集]

Part of an IBM 7070 card cage populated with Standard Modular System cards

Before transistors were invented, relays were used in commercial tabulating machines and experimental early computers. The world's first working programmable, fully automatic digital computer,[70] the 1941 Z3 22-bit word length computer, had 2,600 relays, and operated at a clock frequency of about 4–5 Hz. The 1940 Complex Number Computer had fewer than 500 relays,[71] but it was not fully programmable. The earliest practical computers used vacuum tubes and solid-state diode logic. ENIAC had 18,000 vacuum tubes, 7,200 crystal diodes, and 1,500 relays, with many of the vacuum tubes containing two triode elements.

The second generation of computers were transistor computers that featured boards filled with discrete transistors, solid-state diodes and magnetic memory cores. The experimental 1953 48-bit Transistor Computer, developed at the University of Manchester, is widely believed to be the first transistor computer to come into operation anywhere in the world (the prototype had 92 point-contact transistors and 550 diodes).[72] A later version the 1955 machine had a total of 250 junction transistors and 1,300 point-contact diodes. The Computer also used a small number of tubes in its clock generator, so it was not the first fully transistorized. The ETL Mark III, developed at the Electrotechnical Laboratory in 1956, may have been the first transistor-based electronic computer using the stored program method. It had about "130 point-contact transistors and about 1,800 germanium diodes were used for logic elements, and these were housed on 300 plug-in packages which could be slipped in and out."[73] The 1958 decimal architecture IBM 7070 was the first transistor computer to be fully programmable. It had about 30,000 alloy-junction germanium transistors and 22,000 germanium diodes, on approximately 14,000 Standard Modular System (SMS) cards. The 1959 MOBIDIC, short for "MOBIle DIgital Computer", at 12,000 pounds (6.0 short tons) mounted in the trailer of a semi-trailer truck, was a transistorized computer for battlefield data.

The third generation of computers used integrated circuits (ICs).[74] The 1962 15-bit Apollo Guidance Computer used "about 4,000 "Type-G" (3-input NOR gate) circuits" for about 12,000 transistors plus 32,000 resistors.[75]

The IBM System/360, introduced 1964, used discrete transistors in hybrid circuit packs.[74] The 1965 12-bit PDP-8 CPU had 1409 discrete transistors and over 10,000 diodes, on many cards. Later versions, starting with the 1968 PDP-8/I, used integrated circuits. The PDP-8 was later reimplemented as a microprocessor as the Intersil 6100, see below.[76]

The next generation of computers were the microcomputers, starting with the 1971 Intel 4004, which used MOS transistors. These were used in home computers or personal computers (PCs).

This list includes early transistorized computers (second generation) and IC-based computers (third generation) from the 1950s and 1960s.

Computer Transistor count Year Manufacturer Notes Ref
Transistor Computer 92 1953 University of Manchester Point-contact transistors, 550 diodes. Lacked stored program capability. [72]
TRADIC 700 1954 Bell Labs Point-contact transistors [72]
Transistor Computer (full size) 250 1955 University of Manchester Discrete point-contact transistors, 1,300 diodes [72]
IBM 608 3,000 1955 IBM Germanium transistors [77]
ETL Mark III 130 1956 Electrotechnical Laboratory Point-contact transistors, 1,800 diodes, stored program capability [72][73]
Metrovick 950 200 1956 Metropolitan-Vickers Discrete junction transistors
NEC NEAC-2201 600 1958 NEC Germanium transistors [78]
Hitachi MARS-1 1,000 1958 Hitachi [79]
IBM 7070 30,000 1958 IBM Alloy-junction germanium transistors, 22,000 diodes
Matsushita MADIC-I 400 1959 Matsushita Bipolar transistors [80]
NEC NEAC-2203 2,579 1959 NEC [81]
Toshiba TOSBAC-2100 5,000 1959 Toshiba [82]
IBM 7090 50,000 1959 IBM Discrete germanium transistors
PDP-1 2,700 1959 Digital Equipment Corporation Discrete transistors
Olivetti Elea 9003 ? 1959 Olivetti 300,000 (?) discrete transistors and diodes
Mitsubishi MELCOM 1101 3,500 1960 Mitsubishi Germanium transistors [83]
M18 FADAC 1,600 1960 Autonetics Discrete transistors
CPU of IBM 7030 Stretch 169,100 1961 IBM World's fastest computer from 1961 to 1964 [84]
D-17B 1,521 1962 Autonetics Discrete transistors
NEC NEAC-L2 16,000 1964 NEC Ge transistors [85]
CDC 6600 (entire computer) 400,000 1964 Control Data Corporation World's fastest computer from 1964 to 1969 [86]
IBM System/360 ? 1964 IBM Hybrid circuits
PDP-8 "Straight-8" 1,409[76] 1965 Digital Equipment Corporation discrete transistors, 10,000 diodes
PDP-8/S 1,001 1966 Digital Equipment Corporation discrete transistors, diodes
PDP-8/I 1,409[要出典] 1968 Digital Equipment Corporation 74 series TTL circuits
Apollo Guidance Computer Block I 12,300 1966 Raytheon / MIT Instrumentation Laboratory 4,100 ICs, each containing a 3-transistor, 3-input NOR gate. (Block II had 2,800 dual 3-input NOR gates ICs.)

Logic functions[編集]

Transistor count for generic logic functions is based on static CMOS implementation.

Function Transistor count Ref
NOT 2
Buffer 4
NAND 2-input 4
NOR 2-input 4
AND 2-input 6
OR 2-input 6
NAND 3-input 6
NOR 3-input 6
XOR 2-input 6
XNOR 2-input 8
MUX 2-input with TG 6
MUX 4-input with TG 18
NOT MUX 2-input 8
MUX 4-input 24
1-bit full adder 24
1-bit adder–subtractor 48
AND-OR-INVERT 6 [87]
Latch, D gated 8
Flip-flop, edge triggered dynamic D with reset 12
8-bit multiplier 3,000
16-bit multiplier 9,000
32-bit multiplier 21,000 [要出典]
small-scale integration 2–100 [88]
medium-scale integration 100–500 [88]
large-scale integration 500–20,000 [88]
very-large-scale integration 20,000–1,000,000 [88]
ultra-large scale integration >1,000,000

Parallel systems[編集]

Historically, each processing element in earlier parallel systems—like all CPUs of that time—was a serial computer built out of multiple chips. As transistor counts per chip increases, each processing element could be built out of fewer chips, and then later each multi-core processor chip could contain more processing elements.[89]

Goodyear MPP: (1983?) 8 pixel processors per chip, 3,000 to 8,000 transistors per chip.[89]

Brunel University Scape (single-chip array-processing element): (1983) 256 pixel processors per chip, 120,000 to 140,000 transistors per chip.[89]

Cell Broadband Engine: (2006) with 9 cores per chip, had 234 million transistors per chip.[90]

Other devices[編集]

Device type Device name Transistor count Date of introduction Designer(s) Manufacturer(s) MOS process Area Transistor density, tr./mm2 Ref
Deep learning engine / IPU[注釈 3] Colossus GC2 23,600,000,000 2018 Graphcore TSMC 16 nm ~800 mm2 29,500,000 [91][92][93] 
Deep learning engine / IPU Wafer Scale Engine 1,200,000,000,000 2019 Cerebras TSMC 16 nm 46,225 mm2 25,960,000 [94][2][3][4]
Deep learning engine / IPU Wafer Scale Engine 2 2,600,000,000,000 2020 Cerebras TSMC 7 nm 46,225 mm2 56,250,000 [5][95][96]
Network switch NVLink4 NVSwitch 25,100,000,000 2022 Nvidia TSMC N4 (4 nm) 294 mm2 85,370,000 [97]

Transistor density[編集]

The transistor density is the number of transistors that are fabricated per unit area, typically measured in terms of the number of transistors per square millimeter (mm2). The transistor density usually correlates with the gate length of a semiconductor node (also known as a semiconductor manufacturing process), typically measured in nanometers (nm). 2019年現在, the semiconductor node with the highest transistor density is TSMC's 5 nanometer node, with 171.3 million transistors per square millimeter (note this corresponds to a transistor-transistor spacing of 76.4 nm, far greater than the relative meaningless "5nm")[98]

MOSFET nodes[編集]

「List of semiconductor scale examples」を参照

See also[編集]

Notes[編集]

  1. ^ a b Estimate
  2. ^ Versal Premium are confirmed to be shipping in 1H 2021 but nothing was mentioned about the VP1802 in particular. Usually Xilinx makes separate news for the release of its biggest devices so the VP1802 is likely to be released later.
  3. ^ "Intelligence Processing Unit"

References[編集]

  1. ^ Khosla, Robin (2017). Alternate high-k dielectrics for next-generation CMOS logic and memory technology (Thesis). IIT Mandi.
  2. ^ a b Feldman (2019年8月). “Machine Learning chip breaks new ground with waferscale integration”. nextplatform.com. 2019年9月6日閲覧。 引用エラー: 無効な <ref> タグ; name "NextPlatform-WSE"が異なる内容で複数回定義されています
  3. ^ a b Cutress (2019年8月). “Hot Chips 31 Live Blogs: Cerebras' 1.2 Trillion Transistor Deep Learning Processor”. anandtech.com. 2019年9月6日閲覧。 引用エラー: 無効な <ref> タグ; name "AnandTech-WSE"が異なる内容で複数回定義されています
  4. ^ a b “A Look at Cerebras Wafer-Scale Engine: Half Square Foot Silicon Chip” (英語). WikiChip Fuse (2019年11月16日). 2019年12月2日閲覧。 引用エラー: 無効な <ref> タグ; name "WikichipFuse-WSE"が異なる内容で複数回定義されています
  5. ^ a b Everett (2020年8月26日). “World's largest CPU has 850,000 7 nm cores that are optimized for AI and 2.6 trillion transistors”. TechReportArticles. Template:Cite webの呼び出しエラー：引数 accessdate は必須です。 引用エラー: 無効な <ref> タグ; name ":1"が異なる内容で複数回定義されています
  6. ^ "Apple introduces M2 Ultra" (Press release). Apple. 5 June 2023.
  7. ^ “John Gustafson's answer to How many individual transistors are in the world's most powerful supercomputer?”. Quora. 2019年8月22日閲覧。
  8. ^ Laws (2018年4月2日). “13 Sextillion & Counting: The Long & Winding Road to the Most Frequently Manufactured Human Artifact in History”. Computer History Museum. Template:Cite webの呼び出しエラー：引数 accessdate は必須です。
  9. ^ Handy (2014年5月26日). “How Many Transistors Have Ever Shipped?”. Forbes. Template:Cite webの呼び出しエラー：引数 accessdate は必須です。
  10. ^ “1971: Microprocessor Integrates CPU Function onto a Single Chip”. The Silicon Engine. Computer History Museum. 2019年9月4日閲覧。
  11. ^ Holt. “World's First Microprocessor”. 2016年3月5日閲覧。 “1st fully integrated chip set microprocessor”
  12. ^ “Alpha 21364 - Microarchitectures - Compaq - WikiChip”. en.wikichip.org. 2019年9月8日閲覧。
  13. ^ Williams. “Nvidia's Tesla P100 has 15 billion transistors, 21TFLOPS”. www.theregister.co.uk. 2019年8月12日閲覧。
  14. ^ "“Altera's new 40nm FPGAs — 2.5 billion transistors!”. pldesignline.com. 2010年6月19日時点のオリジナルよりアーカイブ。2009年1月22日閲覧。
  15. ^ “Altera unveils 28-nm Stratix V FPGA family” (2010年4月20日). 2010年4月20日閲覧。
  16. ^ “Design of a High-Density SoC FPGA at 20nm” (2014年). 2016年4月23日時点のオリジナルよりアーカイブ。2017年7月16日閲覧。
  17. ^ Maxfield, Clive (October 2011). "New Xilinx Virtex-7 2000T FPGA provides equivalent of 20 million ASIC gates". EETimes. AspenCore. 2019年9月4日閲覧。
  18. ^ Greenhill, D.; Ho, R.; Lewis, D.; Schmit, H.; Chan, K. H.; Tong, A.; Atsatt, S.; How, D. et al. (February 2017). “3.3 a 14nm 1GHz FPGA with 2.5D transceiver integration”. 2017 IEEE International Solid-State Circuits Conference (ISSCC). pp. 54–55. doi:10.1109/ISSCC.2017.7870257. ISBN 978-1-5090-3758-2 
  19. ^ “3.3 A 14nm 1GHz FPGA with 2.5D transceiver integration | DeepDyve” (2017年5月17日). 2017年5月17日時点のオリジナルよりアーカイブ。2019年9月19日閲覧。
  20. ^ Santarini, Mike (May 2014). "Xilinx Ships Industry's First 20-nm All Programmable Devices" (PDF). Xcell journal. No. 86. Xilinx. p. 14. 2014年6月3日閲覧。
  21. ^ Gianelli (2015年1月). “Xilinx Delivers the Industry's First 4M Logic Cell Device, Offering >50M Equivalent ASIC Gates and 4X More Capacity than Competitive Alternatives”. www.xilinx.com. 2019年8月22日閲覧。
  22. ^ Sims (2019年8月). “Xilinx Announces the World's Largest FPGA Featuring 9 Million System Logic Cells”. www.xilinx.com. 2019年8月22日閲覧。
  23. ^ Verheyde (2019年8月). “Xilinx Introduces World's Largest FPGA With 35 Billion Transistors”. www.tomshardware.com. 2019年8月23日閲覧。
  24. ^ Cutress (2019年8月). “Xilinx Announces World Largest FPGA: Virtex Ultrascale+ VU19P with 9m Cells”. www.anandtech.com. 2019年9月25日閲覧。
  25. ^ Abazovic, Fuad (2019年5月). “Xilinx 7nm Versal taped out last year”. https://fudzilla.com/news/ai/48791-xilinx-7nm-versal-taped-out-last-year 2019年9月30日閲覧。 
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